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71.
S. D. Campos 《中国物理C(英文版)》2020,44(10):103103-103103-10
This work presents the subtraction procedure and the Regge cut in the logarithmic Regge pole approach. The subtraction mechanism leads to the same asymptotic behavior as previously obtained in the non-subtraction case. The Regge cut, in contrast, introduces a clear role to the non-leading contributions for the asymptotic behavior of the total cross-section. From these results, some simple parameterization is introduced to fit the experimental data for the proton-proton and antiproton-proton total cross-section above some minimum value up to the cosmic-ray. The fit parameters obtained are used to present predictions for the \begin{document}$ \rho(s)$\end{document}
-parameter as well as to the elastic slope \begin{document}$ B(s)$\end{document}
at high energies. 相似文献
72.
This study compares the physicochemical properties of six electrolytes comprising of three salts: LiFTFSI, NaFTFSI and KFTFSI in two solvent mixtures, the binary (3EC/7EMC) and the ternary (EC/PC/3DMC). The transport properties (conductivity, viscosity) as a function of temperature and concentration were modeled using the extended Jones-Dole-Kaminsky equation, the Arrhenius model, and the Eyring theory of transition state for activated complexes. Results are discussed in terms of ionicity, solvation shell, and cross-interactions between electrolyte components. The application of the six formulated electrolytes in symmetrical activated carbon (AC)//AC supercapacitors (SCs) was characterized by cyclic voltammetry (CV), galvanostatic cycling with potential limitation (GCPL), electrochemical impedance spectroscopy (EIS) and accelerated aging. Results revealed that the geometrical flexibility of the FTFSI anion allows it to access and diffuse easily in AC whereas its counter ions (Li+, Na+ or K+) can remain trapped in porosity. However, this drawback was partially resolved by mixing LiFTFSI and KFTFSI salts in the electrolyte. 相似文献
73.
Dapeng Liu Binod R. Giri Milán Szőri Béla Viskolcz Et-touhami Es-sebbar Aamir Farooq 《Proceedings of the Combustion Institute》2021,38(1):967-976
NOx mitigation is a central focus of combustion technologies with increasingly stringent emission regulations. NOx can also enhance the autoignition of hydrocarbon fuels and can promote soot oxidation. The reaction between allyl radical (C3H5) and NOx plays an important role in the oxidation kinetics of propene. In this work, we measured the absolute rate coefficients for the redox reaction between C3H5 and NOx over the temperature range of 1000–1252 K and pressure range of 1.5–5.0 bar using a shock tube and UV laser absorption technique. We produced C3H5 by shock heating of C3H5I behind reflected shock waves. Using a Ti:Sapphire laser system with frequency quadrupling, we monitored the kinetics of C3H5 at 220 nm. Unlike low-temperature chemistry, the two target reactions, C3H5 + NO → products (R1) and C3H5 + NO2 → products (R2), exhibited a strong positive temperature dependence for this radical-radical type reaction. However, these reactions did not show any pressure dependence over the pressure range of 1.5–5.0 bar, indicating that the measured rate coefficients are close to the high-pressure limit. The measured values of the rate coefficients resulted in the following Arrhenius expressions (in unit of cm3/molecule/s):To our knowledge, these are the first high-temperature measurements of allyl + NOx reactions. The reported data will be highly useful in understanding the interaction of NOx with resonantly stabilized radicals as well as the mutual sensitization effect of NOx on hydrocarbon fuels. 相似文献
74.
Algebras and Representation Theory - We introduce and study the category of twisted modules over a triangular differential graded bocs. We show that in this category idempotents split, that it... 相似文献
75.
Mathematical Notes - We study the multiplicity of weak solutions to the boundary-value problem $$\begin{alignedat}{2} - M\biggl(\iint_{\mathbb R^{2N}}|u(x)-u(y)|^2 K(x-y)\,d x\,d y\biggr)\mathscr... 相似文献
76.
S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
77.
Sulyanova E. A. Bolotina N. B. Kalukanov A. I. Sorokin N. I. Karimov D. N. Verin I. A. Sobolev B. P. 《Crystallography Reports》2019,64(1):41-50
Crystallography Reports - The defect structure of as-grown SrF2 and nonstoichiometric phases Sr1 – xLaxF2 + x (x = 0.11, 0.20, 0.32, 0.37, 0.47) single... 相似文献
78.
Optics and Spectroscopy - A cell with a submicron thickness was used to measure the broadening and shift of the D1 and D2 lines of Rb atoms by neon. The resolution of hypefine components... 相似文献
79.
80.
Periodica Mathematica Hungarica - We present a tight parametrical Hermite–Hadamard type inequality with probability measure, which yields a considerably closer upper bound for the mean value... 相似文献